INTERFACE ATOM MOBILITY AND CHARGE TRANSFER EFFECTS ON CUO AND CU2O FORMATION ON CU3PD(111) AND CU3PT(111)




Scaling behavior of InAlN/GaN HEMTs on silicon for RF applications

Abstract Due to the low cost and the scaling capability of Si substrate, InAlN/GaN high-electron-mobility transistors (HEMTs) on silicon substrate have attracted more and more attentions.In this paper, a high-performance 50-nm-gate-length InAlN/GaN HEMT on Si with a high on/off current (I on/I off) ratio of 7.28 × 106, an average subthreshold

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